SR722BX80H.01#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(FAB)); THICKNESS 350UM(+-)10UM; SR722BX80H01 WLP STAGE NEW 100% TX 1 PART DH 20 TK 105713950310/E11#&KR
SR722BX80H.01#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(FAB)); THICKNESS 350UM(+-)10UM; SR722BX80H01 WLP STAGE NEW 100% TX 1 PART DH 20 TK 105713950310/E11#&KR
16-October-2023
8542900000
SR806DX20H.02#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(FAB)); THICKNESS 350UM(+-)10UM; (SR806DX20H02) WLP STAGE 100% NEW TX 1 PART DH 39 TK 105696861210/E11#&KR
SR806DX20H.02#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(FAB)); THICKNESS 350UM(+-)10UM; (SR806DX20H02) WLP STAGE 100% NEW TX 1 PART DH 39 TK 105696861210/E11#&KR
13-July-2023
8542900000
SHG60AGE0001#&CLUSTER OF SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING (CHIP); THICKNESS 350UM(+-)10UM SHG60AGE0001 CSP STAGE 100% NEW TX 1 PART DH 8 TK 105536571230/E11#&KR
SHG60AGE0001#&CLUSTER OF SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING (CHIP); THICKNESS 350UM(+-)10UM SHG60AGE0001 CSP STAGE 100% NEW TX 1 PART DH 8 TK 105536571230/E11#&KR
30-October-2023
8542900000
WZX08BSV00.00#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(RND): WZX08BSV0000) WLP PROCESS 100% NEW TX 1 PART DH 2 TK 105706082640/E11#&KR
WZX08BSV00.00#&SEMICONDUCTOR WAFERS USED IN SEMICONDUCTOR CHIP MANUFACTURING TECHNOLOGY (WAFER(RND): WZX08BSV0000) WLP PROCESS 100% NEW TX 1 PART DH 2 TK 105706082640/E11#&KR