TRANSISTORS FIELD HIGH-POWER SILICON N-CHANNEL WITH INSULATED GATE ARE DESIGNED TO WORK IN RECTIFIER CIRCUITS OF HOUSEHOLD APPLIANCES PANASONIC MODS A691EM300BP PART OF A MICROWAVE OVEN TRANSISTOR 75 W NUMBER 1PCS BRAND PANASONIC MANUFACTURER PANASONIC CORPORATION COUNTRY OF MANUFACTURE CN
TRANSISTORS FIELD HIGH-POWER SILICON N-CHANNEL WITH INSULATED GATE ARE DESIGNED TO WORK IN RECTIFIER CIRCUITS OF HOUSEHOLD APPLIANCES PANASONIC MODS A691EM300BP PART OF A MICROWAVE OVEN TRANSISTOR 75 W NUMBER 1PCS BRAND PANASONIC MANUFACTURER PANASONIC CORPORATION COUNTRY OF MANUFACTURE CN
TRANSISTORS BIPOLAR SILICON N CHANNEL WITH AN INSULATED GATE MORE THAN 1 W ART MJD45H11 2500PCS TRADEMARK EXCELLENT MANUFACTURER EXCELLENT ELECTRONICS CO LTD EDGES ON PRODUCTION
TRANSISTORS BIPOLAR SILICON N CHANNEL WITH AN INSULATED GATE MORE THAN 1 W ART MJD45H11 2500PCS TRADEMARK EXCELLENT MANUFACTURER EXCELLENT ELECTRONICS CO LTD EDGES ON PRODUCTION
06-August-2021
8541290010
1. POWER SILICON FIELD-EFFECT TRANSISTORS N-CHANNEL WITH INSULATED GATE: - IRF530NPBF - 300 PCS; FIELD; VOLTAGE: 100V; CURRENT: 17A; POWER: 79 W. - IRF7105 - 150 PIECES; FIELD; CURRENT: 3.5 A; VOLTAGE: 25 V; POWER: 2 W. - IRFRC20TRPBF - 1000 PIECES; VOLTAGE: 600 V; CURRENT: 2 A; POWER: 42 W.- IRLR2705TRPBF - 100 PCS; VOLTAGE: 55 V; CURRENT: 28 A; POWER: 68 W. - IRLR7833TRPBF - 600 PIECES; FIELD; VOLTAGE: 30 V; CURRENT: 140 A; POWER: 140 W. - IRLR8726PBF - 1876 PIECES; FIELD; VOLTAGE: 30 V; CURRENT: 86 A; POWER: 75W. USED IN THE MANUFACTURE OF TELECOMMUNICATIONS EQUIPMENT CIVILIANPURPOSE. NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN POTENTIALLY EXPLOSIVE ATMOSPHERES. DO NOT INCLUDE TRANSMITTERS OR TRANSMITTERS AND RECEIVERS. NOT A SPECIAL PURPOSE VEHICLE. COUNTRY OF MANUFACTURE - CN TRADEMARK - INTERNATIONAL RECTIFIER MANUFACTURER - INTERNATIONAL RECTIFIER
1. POWER SILICON FIELD-EFFECT TRANSISTORS N-CHANNEL WITH INSULATED GATE: - IRF530NPBF - 300 PCS; FIELD; VOLTAGE: 100V; CURRENT: 17A; POWER: 79 W. - IRF7105 - 150 PIECES; FIELD; CURRENT: 3.5 A; VOLTAGE: 25 V; POWER: 2 W. - IRFRC20TRPBF - 1000 PIECES; VOLTAGE: 600 V; CURRENT: 2 A; POWER: 42 W.- IRLR2705TRPBF - 100 PCS; VOLTAGE: 55 V; CURRENT: 28 A; POWER: 68 W. - IRLR7833TRPBF - 600 PIECES; FIELD; VOLTAGE: 30 V; CURRENT: 140 A; POWER: 140 W. - IRLR8726PBF - 1876 PIECES; FIELD; VOLTAGE: 30 V; CURRENT: 86 A; POWER: 75W. USED IN THE MANUFACTURE OF TELECOMMUNICATIONS EQUIPMENT CIVILIANPURPOSE. NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN POTENTIALLY EXPLOSIVE ATMOSPHERES. DO NOT INCLUDE TRANSMITTERS OR TRANSMITTERS AND RECEIVERS. NOT A SPECIAL PURPOSE VEHICLE. COUNTRY OF MANUFACTURE - CN TRADEMARK - INTERNATIONAL RECTIFIER MANUFACTURER - INTERNATIONAL RECTIFIER
06-August-2021
8541290010
1. POWER SILICON FIELD-EFFECT TRANSISTORS N-CHANNEL WITH INSULATED GATE: - 2SJ334 - 4 PCS; FIELD; VOLTAGE: 60V CURRENT: 30 A; POWER: 45 W. - SSM6P49NU LF - 100 PIECES; FIELD; VOLTAGE: 20 V; CURRENT: 4 A; POWER: 1 W. USED IN THE MANUFACTURE OF TELECOMMUNICATIONS EQUIPMENT CIVILIAN. NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN POTENTIALLY EXPLOSIVE ATMOSPHERES. DO NOT CONTAIN TRANSMITTERS OR TRANSMITTERS AND RECEIVERS. NOT A SPECIAL PURPOSE VEHICLE. COUNTRY OF MANUFACTURE - CN TRADEMARK - TOSHIBA SEMICONDUCTOR MANUFACTURER - TOSHIBA SEMICONDUCTOR
1. POWER SILICON FIELD-EFFECT TRANSISTORS N-CHANNEL WITH INSULATED GATE: - 2SJ334 - 4 PCS; FIELD; VOLTAGE: 60V CURRENT: 30 A; POWER: 45 W. - SSM6P49NU LF - 100 PIECES; FIELD; VOLTAGE: 20 V; CURRENT: 4 A; POWER: 1 W. USED IN THE MANUFACTURE OF TELECOMMUNICATIONS EQUIPMENT CIVILIAN. NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN POTENTIALLY EXPLOSIVE ATMOSPHERES. DO NOT CONTAIN TRANSMITTERS OR TRANSMITTERS AND RECEIVERS. NOT A SPECIAL PURPOSE VEHICLE. COUNTRY OF MANUFACTURE - CN TRADEMARK - TOSHIBA SEMICONDUCTOR MANUFACTURER - TOSHIBA SEMICONDUCTOR
03-January-2019
8541290010
TRANSISTORS FIELD HIGH-POWER SILICON N-CHANNEL WITH INSULATED GATE FDD6637 30 PCS FIELD VOLTAGE 35 V CURRENT 55 A POWER 3 1 W USED IN THE MANUFACTURE OF CIVIL TELECOMMUNICATIONS EQUIPMENT NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN EXPLOSIVE ATMOSPHERES TRANSMITTERS DO NOT CONTAIN OR TRANSMITTERS NOT A SPECIAL PURPOSE VEHICLE COUNTRY OF MANUFACTURE CN TRADEMARK ON SEMICONDUCTOR MANUFACTURER ON SEMICONDUCTOR
TRANSISTORS FIELD HIGH-POWER SILICON N-CHANNEL WITH INSULATED GATE FDD6637 30 PCS FIELD VOLTAGE 35 V CURRENT 55 A POWER 3 1 W USED IN THE MANUFACTURE OF CIVIL TELECOMMUNICATIONS EQUIPMENT NOT EQUIPMENT OR PROTECTIVE SYSTEMS FOR USE IN EXPLOSIVE ATMOSPHERES TRANSMITTERS DO NOT CONTAIN OR TRANSMITTERS NOT A SPECIAL PURPOSE VEHICLE COUNTRY OF MANUFACTURE CN TRADEMARK ON SEMICONDUCTOR MANUFACTURER ON SEMICONDUCTOR