1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE. TRANSISTOR TYPE N-MOSFET HEXFET TECHNOLOGY FIELD POLARITY DRAIN-SOURCE VOLTAGE 30V DRAIN CURRENT 21 A POWER DISSIPATION 2.5W SO8 CASE PCB SURFACE MOUNTING TYPE OF PACKAGING BOILER OPERATING TEMPERATURES FROM 80° C ARE INTENDED FOR USE IN RADIO-ELECTRONIC EQUIPMENT FOR INDUSTRIAL PURPOSE.
1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE. TRANSISTOR TYPE N-MOSFET HEXFET TECHNOLOGY FIELD POLARITY DRAIN-SOURCE VOLTAGE 30V DRAIN CURRENT 21 A POWER DISSIPATION 2.5W SO8 CASE PCB SURFACE MOUNTING TYPE OF PACKAGING BOILER OPERATING TEMPERATURES FROM 80° C ARE INTENDED FOR USE IN RADIO-ELECTRONIC EQUIPMENT FOR INDUSTRIAL PURPOSE.
1 . FIELD TYPE TRANSISTOR (N-MOSFET) SILICON BODY (DFN5 X 6) POWER DISSIPATION 57 W DRAIN-SOURCE VOLTAGE 100 V DRAIN CURRENT 33 A MOUNTING TYPE SMD
1 . FIELD TYPE TRANSISTOR (N-MOSFET) SILICON BODY (DFN5 X 6) POWER DISSIPATION 57 W DRAIN-SOURCE VOLTAGE 100 V DRAIN CURRENT 33 A MOUNTING TYPE SMD
18-April-2022
8541290000
1 . BIPOLAR SILICON TRANSISTOR NPN TYPE CASE (TO1 26) COLLECTOR-EMMITTER VOLTAGE 80 V COLLECTOR CURRENT 1.5 A POWER DISPOSION 1 2.5 W TNT TYPE MOUNTING
1 . BIPOLAR SILICON TRANSISTOR NPN TYPE CASE (TO1 26) COLLECTOR-EMMITTER VOLTAGE 80 V COLLECTOR CURRENT 1.5 A POWER DISPOSION 1 2.5 W TNT TYPE MOUNTING
18-April-2022
8541290000
1 . FIELD SILICON FIELD TRANSISTOR N-MOSFET TYPE BODY (SOT223) POWER DISSIPATION 1.8 W DRAIN CURRENT 0.53 A DRAIN-SOURCE VOLTAGE 200 V MOUNTING TYPE SMD
1 . FIELD SILICON FIELD TRANSISTOR N-MOSFET TYPE BODY (SOT223) POWER DISSIPATION 1.8 W DRAIN CURRENT 0.53 A DRAIN-SOURCE VOLTAGE 200 V MOUNTING TYPE SMD
18-April-2022
8541290000
1 . FIELD SILICON FIELD TRANSISTOR TYPE (N-MOSFET) CASE (PG-TO220-3) DRAIN-SOURCE VOLTAGE 40 V DRAIN CURRENT 80 A POWER DISPOSION 71 W TNT TYPE MOUNTING
1 . FIELD SILICON FIELD TRANSISTOR TYPE (N-MOSFET) CASE (PG-TO220-3) DRAIN-SOURCE VOLTAGE 40 V DRAIN CURRENT 80 A POWER DISPOSION 71 W TNT TYPE MOUNTING