HS-Code
Products
8541290000
1 . FIELD TYPE TRANSISTOR (N-MOSFET) SILICON BODY (TO220-3) POWER DISSIPATION 1 50 W DRAIN CURRENT 25 A DRAIN-SOURCE VOLTAGE 1 00 V MOUNTING TYPE TNT
8541290000
1 . FIELD FIELD TRANSISTOR TYPE N-MOSFET SILICON BODY (TO247) POWER DISPOSION 1 90 W DRAIN CURRENT 20.8 A DRAIN-SOURCE VOLTAGE 650 V MOUNTING TYPE TNT
8541290000
1 . FIELD FIELD TRANSISTOR TYPE N-MOSFET SILICON BODY (D2PAK) POWER DISPOSION 230 W DRAIN CURRENT 1 73 A DRAIN-SOURCE VOLTAGE 60 V MOUNTING TYPE TNT
HS-Code
Products
8541290000
1 . MOSFET SEMICONDUCTOR TYPE: SI - SILICON POWER DISSIPATION 1 .1 7 W DMP6350S-7
8541290000
1 . MOSFET SEMICONDUCTOR TYPE: SI - SILICON POWER DISSIPATION 3 W PD55003TR-E
8541290000
1 . MOSFET SEMICONDUCTOR TYPE: SI - SILICON POWER DISSIPATION 300W IXTH6N50D2
HS-Code
Products
8541290000
1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE. TRANSISTOR TYPE N-MOSFET UNIFET TECHNOLOGY FIELD POLARITY DRAIN-SOURCE VOLTAGE 300V DRAIN CURRENT 28A POWER DISSIPATION 250W D2PAK CASE GATE-SOURCE VOLTAGE +\- 30V RESISTANCE
8541290000
1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE POWER DISPOSION 2 W. DRAIN-SOURCE BREAKDOWN VOLTAGE 50 V CONTINUOUS LEAKAGE CURRENT 3 A GATE-SOURCE VOLTAGE 20 V SO-8 BODY OPERATING TEMPERATURES FROM -50 TO 125°C DESIGNED FOR USE
8541290000
1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE. TRANSISTOR TYPE N-MOSFET HEXFET TECHNOLOGY FIELD POLARITY DRAIN-SOURCE VOLTAGE 30V DRAIN CURRENT 21 A POWER DISSIPATION 2.5W SO8 CASE PCB SURFACE MOUNTING TYPE OF PACKAGING BOILER OPERATING TEMPERATURES FROM 80° C ARE INTENDED FOR USE IN RADIO-ELECTRONIC EQUIPMENT FOR INDUSTRIAL PURPOSE.
HS-Code
Products
8541290000
1 . SILICON N-CHANNEL MOSFET TRANSISTORS POWER DISSIPATION 56.8 W. DRAIN-SOURCE BREAKDOWN VOLTAGE 1-50V CONTINUOUS LEAKAGE CURRENT 1-8A GATE-SOURCE VOLTAGE 20V TO252 BODY OPERATING TEMPERATURES FROM -50 TO 125°C DESIGNED FOR AND
8541290000
1 . SILICON MOSFET TRANSISTORS WITH P-CHANNEL STRUCTURE. TRANSISTOR TYPE P-MOSFET FIELD POLARITY DRAIN-SOURCE VOLTAGE -30V DRAIN CURRENT -5A POWER DISSIPATION 3W CASE SOT223 GATE-SOURCE VOLTAGE +\- 20V OPEN RESISTANCE 1 30M SURFACE MOUNTING WORKING TEMPERATURES FROM -40 TO 85°C INTENDED FOR USE IN RADIO-ELECTRONIC EQUIPMENT FOR INDUSTRIAL PURPOSE.
8541290000
1 . SILICON MOSFET TRANSISTORS WITH N-CHANNEL STRUCTURE. TRANSISTOR TYPE N-MOSFET HEXFET TECHNOLOGY FIELD POLARITY DRAIN-SOURCE VOLTAGE 100V DRAIN CURRENT 30A POWER DISSIPATION 47W CASE TO220FP GATE-SOURCE VOLTAGE +/- 30V OPEN RESISTANCE 3 OFF OF THE PRINTED BOARD SHUTTER CHARGE 81 NS OPERATING TEMPERATURES FROM -40 TO 85°C INTENDED FOR USE IN RADIO-ELECTRONIC EQUIPMENT FOR INDUSTRIAL PURPOSE.
HS-Code
Products
8541290000
1 . TRANSISTOR OVER 1W VOLTAGE 50V SILICON
8541290000
1. FIELD TRANSISTOR POWER DISSIPENT 1.8 W SILICON
8541290000
1. TRANSISTOR CURRENT 3 A FREQUENCY 100 MHZ POWER 1.6 W SILICON
HS-Code
Products
8541290000
1 . SEMICONDUCTOR TRANSISTORS EXCEPT PHOTOTRANSISTORS POWER DISPOSION 52 W NOT SCRAP OF ELECTRICAL EQUIPMENT ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET SEMICONDUCTOR TYPE - SILICON
8541290000
1 . SEMICONDUCTOR TRANSISTORS EXCEPT PHOTOTRANSISTORS POWER DISPOSION 3.5 W NOT SCRAP OF ELECTRICAL EQUIPMENT ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET SEMICONDUCTOR TYPE - SILICON
8541290000
1 . SEMICONDUCTOR TRANSISTORS EXCEPT PHOTOTRANSISTORS POWER DISPOSION MORE THAN 1.4 W NOT SCRAP OF ELECTRICAL EQUIPMENT ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET SEMICONDUCTOR TYPE: SI - NON-SILICON
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