CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON
CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON
AES ITN: X20211103511130 1 X 20 DC&1 X 40 HC CONTAINER 60 CRATES SILICON WAFERS H S CODE: 3818 00
AES ITN: X20211103511130 1 X 20 DC&1 X 40 HC CONTAINER 60 CRATES SILICON WAFERS H S CODE: 3818 00
15-December-2021
381800
AES ITN: X20211130960063 1 X 20 DC&1 X 40 DC CONTAINER 60 CRATES SILICON WAFERS H S CODE: 3818 00 SHIPPED ON BOARD ONE COSMOS V 0083W AT TACOMA WA ON DATE DEC 13 2021
AES ITN: X20211130960063 1 X 20 DC&1 X 40 DC CONTAINER 60 CRATES SILICON WAFERS H S CODE: 3818 00 SHIPPED ON BOARD ONE COSMOS V 0083W AT TACOMA WA ON DATE DEC 13 2021
19-September-2023
381800100000
CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON
CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON
03-January-2023
381800100000
CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON
CHEMICAL DOPED ELEMENTS INTENDED FOR USE IN ELECTRONICS IN THE FORM OF DISCS PLATES ETC.; DOPED CHEMICAL COMPOUNDS INTENDED FOR USE IN ELECTRONICS: - DOPED SILICON